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Ordering number : ENN4228B 2SK1412LS N-Channel Silicon MOSFET 2SK1412LS Ultrahigh-Speed Switching Applications Features * * * * Package Dimensions unit : mm 2078C [2SK1412LS] 10.0 3.2 3.5 7.2 Low ON-resistance, low input capacitance. Ultrahigh-speed switching. High reliability (Adoption of HVP process). Micaless package facilitating mounting. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 123 2.4 0.7 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Ratings 1500 20 0.1 0.2 2.0 20 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=1200V, VGS=0 VGS=20V, VDS=0 Ratings min 1500 100 100 typ max Unit V A nA (Note) Be careful in handling the 2SK1412LS because it has no protection diode between gate and source. Marking : K1412 0.6 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1501 TS IM TA-3431 / 51099 TH (KT) / 41293 TH (KOTO) AX-9637 No.4228-1/4 2SK1412LS Continued from preceding page. Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol VGS(off) yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD Conditions VDS=10V, ID=1mA VDS=20V, ID=50mA ID=50mA, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=0.1A, VGS=0 Ratings min 1.5 50 100 140 40 12 3.0 15 25 50 350 1.0 1.5 200 typ max 3.5 Unit V mS pF pF pF ns ns ns ns V Switching Time Test Circuit 10V 0V VIN VDD=200V VIN PW=10s D.C.1% D ID=50mA RL=400 VOUT G S 2SK1412LS P.G RGS 50 200 ID -- VDS .5 =5 S G V 100 ID -- VDS 4. 5V 5 .0V 80 160 Drain Current, ID -- mA Drain Current, ID -- mA V 4.5V 120 60 V =5 GS .0 V 4.0V 80 40 4.0V 40 20 3.5V 3.0V 3.5V 0 0 10 20 30 40 3.0V 50 ITR01044 0 0 4 8 12 16 20 ITR01045 Drain-to-Source Voltage, VDS -- V 200 180 160 ID -- VGS Drain-to-Source Voltage, VDS -- V 200 ID -- Tc Tc= --25C VDS=20V 180 160 VGS=10V Drain Current, ID -- mA Drain Current, ID -- mA 140 140 120 100 80 60 40 20 25C 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 V DS = 20 V 75C 10V 0 --40 --20 0 20 40 60 80 100 120 140 Gate-to-Source Voltage, VGS -- V ITR01046 Case Temperature, Tc -- C ITR01047 No.4228-2/4 2SK1412LS 5 yfs -- ID VDS=20V Static Drain-to-Source On-State Resistance, RDS(on) -- 320 RDS(on) -- VGS ID=50mA Tc=25C Forward Transfer Admittance, yfs -- mS 3 2 280 25 C 100 7 5 3 2 C 75 Tc= 240 --25 C 200 160 120 10 7 5 5 7 10 2 3 5 7 100 2 3 80 40 0 2 4 6 8 10 12 14 16 Drain Current, ID -- mA 320 280 240 200 160 120 80 40 0 --40 ITR01048 2 RDS(on) -- Tc Gate-to-Source Voltage, VGS -- V ITR01049 SW Time -- ID Static Drain-to-Source On-State Resistance, RDS(on) -- VGS=10V ID=50mA Switching Time, SW Time -- ns 1000 7 5 3 2 100 7 5 3 2 10 7 5 tf VGS=10V VDD=200V P.W.=2s D.C.0.5% td(off) tr td(on) --20 0 20 40 60 80 100 120 140 5 7 Case Temperature, Tc -- C 2 100 10 2 3 5 7 100 2 3 5 ITR01050 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Drain Current, ID -- mA ITR01051 ASO IDP=200mA ID=100mA Operation in this area is limited by RDS(on). Drain Current, ID -- mA 7 5 Ciss, Coss, Crss -- pF Ciss 100 7 5 3 2 10 7 5 3 3 2 Coss 10 7 5 3 2 1.0 7 5 0 4 8 12 16 20 24 28 32 10s 10 0 s 1m 10 s DC 100 ms op ms era tio n Crss 2 1.0 Tc=25C Single pulse 2 3 5 7 100 2 3 5 7 1000 2 3 10 Drain-to-Source Voltage, VDS -- V 2.4 ITR01052 24 PD -- Ta Drain-to-Source Voltage, VDS -- V ITR01053 PD -- Tc Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 100 120 140 160 2.0 20 1.6 16 No 1.2 he at sin 12 k 0.8 8 0.4 4 0 0 20 40 60 80 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C ITR01054 Case Temperature, Tc -- C ITR01055 No.4228-3/4 2SK1412LS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice. PS No.4228-4/4 |
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